RF Power Transistors MRF374A RF POWER FIELD EFFECT TRANSISTOR FSL RF Power Transistors RF
|
MRF374A is a RF POWER FIELD EFFECT TRANSISTOR. Part NO: MRF374A Brand: FSL Date Code: 286+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited
|
MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS
|
The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with ......
ChongMing Group (HK) Int'l Co., Ltd
|
MRF175LU MA Transistor RF MOSFET 100W 400MHz Rf Power Field Effect Transistor
|
MRF175LU N/A Electronic Components IC MCU Microcontroller Integrated Circuits MRF175LU #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-......
Shenzhen Kaigeng Technology Co., Ltd.
|
IRFS3207Z Power Field Effect Transistor Mosfet Chip 75V 170A For Circuit Protection
|
...Power Mosfet Field Effect Transistor Chip Circuit Protection 75V 170A Description Power MOSFT 75V 170A 4.1mOhm Single N-Channel HEXFET Power MOSFET in a D2-Pak package Specifications Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-3 Transistor......
KZ TECHNOLOGY (HONGKONG) LIMITED
|
Electronic Components Power Field-Effect Transistors UPA2738GR-E2-AT Integrated Circuits
|
.... - RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −10 A). 4.5 V Gate-drive available. Small and surface mount package (Power SOP8). Pb-free and Halogen free. Electrical Characteristics : Absolute Maximum Ratings : for product datasheet, CONTACT US directly....
Shenzhen Weitaixu Capacitor Co.,Ltd
|
QPD1004 New And Original Electronic Components Integrated Circuit RF Junction Field-Effect Transistor
|
#detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{padding:0;margin:0;color:#333;font-size:14px;padding-left:4px;font-weight:bold;white-space:pre-wrap}#detail_decorate_root .magic-2{text-align:center}#detail_decorate_root .......
ShenZhen QingFengYuan Technology Co.,Ltd.
|
Linear Power Mos Field Effect Transistor Vertical Structure 3403D-U-V
|
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS(ON) = 2.9mΩ(typ.) @V GS = 4.5V 100%...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
|
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ...
Beijing Silk Road Enterprise Management Services Co.,LTD
|
NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
...Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power...
Anterwell Technology Ltd.
|
Common Power Mosfet SPD08P06PGBTMA1 8A 60V N Channel MOSFET field effect transistor
|
This listing is for a SPD08P06PGBTMA1 MOSFET Power Electronics. This MOSFET is a logic level N-channel enhancement mode power field-effect transistor and has the following parameters: Type: MOSFET Power Electronics Part Number: SPD08P06PGBTMA1 Voltage: 8 V......
Shenzhen Sai Collie Technology Co., Ltd.
|
Submit your “rf power field effect transistor” inquiry in a minute :