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| Categories | Single Diodes |
|---|---|
| Non-Repetitive Peak Forward Surge Current: | 76A |
| Reverse Leakage Current (Ir): | 2uA@650V |
| Operating Junction Temperature Range: | -55℃~+175℃ |
| Voltage - DC Reverse (Vr) (Max): | 650V |
| Voltage - Forward(Vf@If): | 1.45V@8A |
| Current - Rectified: | 8A |
| Description: | SiC Diode 650V 8A Through Hole TO-220-2 |
| Mfr. Part #: | BCH65S08D3 |
| Model Number: | BCH65S08D3 |
| Package: | TO-220-2 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The BCH65S08D3 is a 650V, 8A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC technology for excellent low forward voltage and robustness. This diode is designed for applications requiring high power efficiency, featuring negligible reverse recovery, high-speed switching, and a positive temperature coefficient. It is suitable for high-frequency operations with low heat dissipation requirements, contributing to reduced system size and cost. Key applications include switch mode power supplies, solar inverters, data centers, and uninterruptible power supplies.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Parameters | ||||||
| VRRM | Repetitive Peak Reverse Voltage | 650 | V | |||
| IF | Forward Current | TC = 25 | 25 | A | ||
| TC = 135 | 11 | A | ||||
| TC = 154 | 8 | A | ||||
| IF,SM | Non-Repetitive Forward Surge Current | TC = 25, tp = 10 ms | 76 | A | ||
| TC = 110, tp = 10 ms | 68 | A | ||||
| IF,RM | Repetitive Peak Forward Surge Current | TC = 25, tp = 10 ms | 67 | A | ||
| I2dt value | I2t | TC = 25, tp = 10 ms | 32 | As | ||
| TC = 110, tp = 10 ms | 28 | As | ||||
| Ptot | Power Dissipation | TC = 25 | 100 | W | ||
| TC = 110 | 43 | W | ||||
| TC = 150 | 16 | W | ||||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 | 175 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | Typ. | 1.495 | /W | ||
| Electrical Characteristics | ||||||
| VDC | DC blocking voltage | 650 | - | - | V | |
| VF | Forward Voltage | IF=8ATJ=25 | - | 1.45 | 1.7 | V |
| IF=8ATJ=175 | - | 1.75 | - | V | ||
| IR | Reverse Current | VR = 650 V, TJ= 25 | - | 2 | 20 | A |
| VR = 650 V, TJ= 175 | - | 40 | - | A | ||
| QC | Total Capacitive Charge | VR = 400 V, TJ = 25 | - | 22 | - | nC |
| C | Total Capacitance | VR = 0 V, f = 1MHz | - | 440 | - | pF |
| VR = 200 V, f = 1MHz | - | 44 | - | pF | ||
| VR = 400 V, f = 1MHz | - | 38 | - | pF | ||
| EC | Capacitance Stored Energy | VR = 400 V, TC = 25 | - | 5.8 | - | J |
| Ordering Information | ||||||
| Part Number | Top Marking | Package | Packing Method | Quantity | ||
| BCH65S08D3 | BCH65S08D3 | TO220-2 | Tube | 50 units | ||
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