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NPN Transistor HL Haolin Elec D965 800 1000 Plastic Encapsulate SOT 89 3L Package with High Current Capability

Categories Single Bipolar Transistors
Current - Collector Cutoff: 100nA
Emitter-Base Voltage(Vebo): 7V
Pd - Power Dissipation: 750mW
Transition frequency(fT): 150MHz
type: NPN
Number: 1 NPN
Current - Collector(Ic): 5A
Collector - Emitter Voltage VCEO: 20V
Description: 750mW NPN 5A 20V SOT-89 Single Bipolar Transistors RoHS
Mfr. Part #: D965 800-1000
Model Number: D965 800-1000
Package: SOT-89
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NPN Transistor HL Haolin Elec D965 800 1000 Plastic Encapsulate SOT 89 3L Package with High Current Capability

Product Overview

This is a Plastic-Encapsulate NPN Transistor in a SOT-89-3L package. It features low collector-emitter saturation voltage, large collector power dissipation and current capabilities, and a mini power type package. Marked as D965.

Product Attributes

  • Marking: D965
  • Package: SOT-89-3L
  • Material: Plastic-Encapsulate
  • Type: Transistor (NPN)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=100A,IE=040V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA,IB=020V
Emitter-base breakdown voltageV(BR)EBOIE=10A,IC=07V
Collector cut-off currentICBOVCB=10V,IE=00.1A
Emitter cut-off currentIEBOVEB=7V,IC=00.1A
DC current gainhFE(1)VCE=2V, IC=1mA200
hFE(2)VCE=2V, IC=500mA230800
hFE(3)VCE=2V, IC=2A150
Collector-emitter saturation voltageVCE(sat)IC=3A,IB=0.1A1V
Transition frequencyfTVCE=6V,IC=50mAf=200MHz150MHz
Collector output capacitanceCobVCB=20V, IE=0, f=1MHz50pF
Collector-Base VoltageVCBO40V
Collector-Emitter VoltageVCEO20V
Emitter-Base VoltageVEBO7V
Collector CurrentIC5A
Collector Power DissipationPC750mW
Thermal Resistance Junction To AmbientRJA167/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150

2410121455_HL-Haolin-Elec-D965-800-1000_C2689134.pdf

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