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Categories | MOSFET Power Electronics |
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Brand Name: | onsemi |
Model Number: | FQPF19N20C |
Place of Origin: | original |
MOQ: | 1 |
Price: | Negotiable |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 999999 |
Delivery Time: | 1-3 days |
Packaging Details: | standard |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 170mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Vgs (Max): | ±30V |
FQPF19N20C MOSFET Power Electronics N-Channel Package TO-220 suitable for switched mode power supplies
N-Channel PowerTrench
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 170mOhm @ 9.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 43W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-220F-3 | |
Package / Case |
Features
• 19 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V,
ID = 9.5 A
• Low Gate Charge (Typ. 40.5 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is produced using
Fairchild Semiconductor’s proprietary planar stripe and DMOS
technology. This advanced MOSFET technology has been especially
tailored to reduce on-state resistance, and to provide superior
switching performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,active power
factor correction (PFC), and electronic lamp ballasts.
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